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ST330S16P0PBF Arkusz danych(PDF) 6 Page - Vishay Siliconix |
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ST330S16P0PBF Arkusz danych(HTML) 6 Page - Vishay Siliconix |
6 / 7 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94409 6 Revision: 11-Aug-08 ST330SPbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 330 A Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE 0.1 1 10 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) (2) (3) InstantaneousGate Current (A) Rectangular gate pulse a) Recommended load line for b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms Frequency Limited by PG(AV) rated di/ dt : 20V, 10ohms; tr<=1 µs tr<=1 µs (1) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms Device: ST330SSeries (4) 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 3/4"-16UNF-2A threads 7 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 8 - Lead (Pb)-free Device code 5 13 24 67 8 ST 33 0 S 16 P 0 PbF LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95080 |
Podobny numer części - ST330S16P0PBF |
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Podobny opis - ST330S16P0PBF |
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