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NZT753 Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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NZT753 Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 www.kexin.com.cn SOT-223 Unit: mm 3.00+0.1 -0.1 0.70+0.1 -0.1 2.9 4.6 6.50+0.2 -0.2 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 12 4 3 1 Base 2 Collector 3 Emitter 4 Collector PNP Current Driver Transistor NZT753 Features Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO -100 V Collector-Base Voltage VCBO -120 V Emitter-Base Voltage VEBO -5 V Collector Current - Continuous IC -4 A Operating and Storage Junction Temperature Range TJ,TSTG -55to+150 Total Device Dissipation 1.2 W Derate above 25 9.7 mW/ Thermal Resistance, Junction to Ambient RèJA 103 /W PD Electrical Characteristics Ta = 25 unless otherwise stated Parameter Symbol Testconditons Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC = -10mA, IB =0 -100 V Collector-Base Breakdown Voltage BVCBO IC = -100ìA, IE =0 -120 V Emitter-Base Breakdown Voltage BVEBO IE = -100ìA, IC =0 -5.0 V VCB = -100V, IE =0 -0.1 ìA TA = 100 -10 ìA Emitter-Base Cutoff Current IEBO VEB =-4V, IC =0 -0.1 ìA VCE =-2.0V, IC = -50mA 70 VCE =-2.0V, IC = -500mA 100 300 VCE =-2.0V, IC = -1.0A 55 Collector-Emitter Saturation Voltage VCE(sat) IC = -1.0A, IC = -50mA -0.3 V Base-Emitter Saturation Voltage VBE(sat) IC = -1.0A, IB = -100mA -1.25 V Base-Emitter On Voltage VBE(on) VCE = -2.0V, IC = -1.0A, -1.0 V Transition Frequency fT VCE =-5V, IC = -100mA, f = 100MHz 75 MHz *Pulse Test: Pulse Width 300ìs, Duty Cycle 2.0% ICBO Collector-Base Cutoff Current hFE DC Current Gain |
Podobny numer części - NZT753 |
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Podobny opis - NZT753 |
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