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BU2507DF Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2507DF Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2507DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA ;IC= 0 7.5 13.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A ;IB= 0.8A 1.1 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 160 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 14 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 5 7 9 VECF C-E Diode Forward Voltage IF= 4A 2.0 V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz 68 pF isc Website:www.iscsemi.cn |
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