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BU2725DW Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2725DW Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2725DW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.75A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.75A B 0.95 V ICES Collector Cutoff Current VCE= 1700V ; VBE= 0 VCE= 1700V ; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 110 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 19 hFE-2 DC Current Gain IC= 7A ; VCE= 1V 3.8 7.8 VECF C-E Diode Forward Voltage IF= 7A 2.2 V isc Website:www.iscsemi.cn 2 |
Podobny numer części - BU2725DW |
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