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2SA1006A Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części 2SA1006A
Szczegółowy opis  isc Silicon PNP Power Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1006A Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
2
isc Silicon PNP Power Transistor
2SA1006A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
-1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
-1.5
V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
-1.0
μA
IEBO
Emitter Cutoff Current
VEB= -3.0V; IC=0
-1.0
μA
hFE-1
DC Current Gain
IC= -5mA ; VCE= -5V
30
hFE-2
DC Current Gain
IC= -150mA ; VCE= -5V
60
320
fT
Current-Gain—Bandwidth Product
IC= -100mA ; VCE= -10V
80
MHz
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
45
pF
hFE-2 Classifications
R
Q
P
60-120
100-200
160-320


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