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2SD110 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD110 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD110 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 30 300 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 1 MHz COB Output Capacitance IE= 0 ; VCB= 50V; f= 1MHz 200 pF hFE-2 Classifications R O Y 30-90 50-150 100-300 isc Website:www.iscsemi.cn 2 |
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