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2SC1309 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1309 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1309 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 500 V V(BR)EBO Emitter-base breakdown votage IE=1.0mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A 10 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.2 A 2 V ICBO Collector cut-off current VCB=1200V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=10V 10 |
Podobny numer części - 2SC1309 |
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Podobny opis - 2SC1309 |
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