2SD1266 datasheet(2/2 Pages) ISC

Numer części	2SD1266

Szczegółowy opis	isc Silicon NPN Power Transistor

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Producent	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

2

isc Silicon NPN Power Transistor

2SD1266

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 30mA ; IB= 0

60

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.375A

1.2

V

VBE(on)

Base-Emitter On Voltage

IC= 3A; VCE= 4V

1.8

V

ICES

Collector Cutoff Current

VCE= 60V; VBE= 0

0.2

mA

ICEO

Collector Cutoff Current

VCE= 30V; IB= 0

0.3

mA

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

1.0

mA

hFE-1

DC Current Gain

IC= 1A ; VCE= 4V

70

250

hFE-2

DC Current Gain

IC= 3A ; VCE= 4V

10

fT

Current-Gain

—Bandwidth Product

IC= 0.5A ; VCE= 10V; f= 10MHz

30

MHz

Switching times

ton

Turn-on Time

0.5

μs

tstg

Storage Time

2.5

μs

tf

Fall Time

IC= 1A ; IB1= -IB2= 0.1A;

VCC= 50V

0.4

μs

u h

FE-1 classifications

Q

P

70-150

120-250

Podobny numer części - 2SD1266

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Panasonic Semiconductor	2SD1266	47Kb / 2P	Silicon PNP epitaxial planar type(For low-frequency power amplification)
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Savantic, Inc.	2SD1266	136Kb / 4P	Silicon NPN Power Transistors
Panasonic Semiconductor	2SD1266A	47Kb / 2P	Silicon PNP epitaxial planar type(For low-frequency power amplification)

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