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2SD1270 Arkusz danych(PDF) 2 Page - Savantic, Inc. |
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2SD1270 Arkusz danych(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1270 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 80 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 50 µA hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=2A ; VCE=2V 60 260 fT Transition frequency IC=0.5A;VCE=10V;f=10MHz 30 MHz Switching times ton Turn-on time 0.5 µs ts Storage time 1.5 µs tf Fall time IC=2A ;IB1=0.2A ;IB2=-0.2A VCC=50V 0.15 µs hFE-2 Classifications R Q P 60-120 90-180 130-260 |
Podobny numer części - 2SD1270 |
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Podobny opis - 2SD1270 |
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