ST2N2222 datasheet(2/4 Pages) SEMTECH_ELEC

Numer części	ST2N2222

Szczegółowy opis	NPN Silicon Epitaxial Planar Transistor

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Producent	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

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Dated : 05/10/2005

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SEMTECH ELECTRONICS LTD.

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ST 2N2222 / 2N2222A

Characteristics at Tamb=25 OC

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at IC=0.1mA, VCE=10V

at IC=1mA, VCE=10V

at IC=10mA, VCE=10V

at IC=150mA, VCE=10V

at IC=500mA, VCE=10V

ST 2N2222

ST 2N2222A

hFE

35

50

75

100

30

40

-

300

-

Collector Cutoff Current

at VCB=50V

at VCB=60V

ST 2N2222

ST 2N2222A

ICBO

-

0.01

µA

Collector Base Breakdown Voltage

at IC=10µA

ST 2N2222

ST 2N2222A

V(BR)CBO

60

75

-

V

Collector Emitter Breakdown Voltage

at IC=10mA

ST 2N2222

ST 2N2222A

V(BR)CEO

30

40

-

V

Emitter Base Breakdown Voltage

at IE=10µA

ST 2N2222

ST 2N2222A

V(BR)EBO

5

6

-

V

Collector Saturation Voltage

at IC=150mA, IB=15mA

at IC=500mA, IB=50mA

ST 2N2222

ST 2N2222A

ST 2N2222

ST 2N2222A

VCE(sat)

-

0.4

0.3

1.6

1

V

Base Saturation Voltage

at IC=150mA, IB=15mA

at IC=500mA, IB=50mA

ST 2N2222

ST 2N2222A

ST 2N2222

ST 2N2222A

VBE(sat)

-

0.6

-

1.3

1.2

2.6

2.0

V

Gain Bandwidth Product

at IC=20mA, VCE=20V, f=100MHz

fT

250

-

MHz

Collector Output Capacitance

at VCB=10V, f=1MHz

Cob

-

8

pF

Input Capacitance

at VCB=0.5V, f=1MHz

Cib

-

30

pF

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