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Dated : 23/06/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
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output
Input 2Vrms
Rectification Efficiency Measurement Circuit
ST60P, ST60S
SILICON SCHOTTKY BARRIER DIODE
Characteristics equivalent to
1N60P and 1N60S
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
45
V
Reverse Voltage
VR
20
V
Average Rectified Output Current
IO
50
mA
Peak Forward Current
IFM
150
mA
Surge Forward Current
Isurge
500
mA
Junction Temperature
Tj
175
O
C
Storage Temperature Range
TS
- 55 to + 175
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Current
at VF = 1 V
IF
4
-
mA
Reverse Current
at VR = 10 V
ST60P
ST60S
IR
-
-
50
100
µA
Junction Capacitance
at f = 1 MHz, V = -1 V
C
-
1
pF
Rectification efficiency
at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz
η
55
-
%
R5 max
10.0± 1.0
1.0 max
3.9 max
Dimensions in mm
Glass case DO-35-1
Max. 3.9
Max. 1.9
Glass Case DO-35
Max. 0.5
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
ST
"ST" Brand
Dimensions in mm
Black
Black
Black