Dated : 27/12/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BC237...BC239
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
The transistor is subdivided into three groups, A, B,
and C, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
BC237
BC238
BC239
Unit
Collector Base Voltage
VCBO
50
30
30
V
Collector Emitter Voltage
VCEO
45
25
25
V
Emitter Base Voltage
VEBO
6
5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
500
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
hFE
hFE
hFE
120
180
380
220
460
800
-
-
-
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 30 V
BC237
BC238, BC239
ICBO
-
-
15
15
nA
Collector Emitter Breakdown Voltage
at IC = 2 mA
BC237
BC238, BC239
V(BR)CEO
45
25
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
BC237
BC238, BC239
V(BR)EBO
6
5
-
-
V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VCE(sat)
-
-
0.2
0.6
V
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VBE(sat)
-
-
0.83
1.05
V
Base Emitter On Voltage
at VCE = 5 V, IC = 2 mA
VBE(on)
0.55
0.7
V
Current Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
150
-
MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Cob
-
4.5
pF
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
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