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2SA963 Arkusz danych(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA963 Arkusz danych(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA963 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0 -40 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -50 V VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-150mA -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA ICEO Collector cut-off current VCE=-10V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V 80 220 COB Output capacitance IE=0 ; VCB=-5V;f=1MHz 70 pF fT Transition frequency IE=0.5A ; VCB=-5V,f=200MHz 150 MHz hFE Classifications Q R 80-160 120-220 |
Podobny numer części - 2SA963 |
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Podobny opis - 2SA963 |
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