1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

45

Vdc

Collector – Base Voltage

VCBO

45

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 2.0 mAdc, IE= 0)

V(BR)CEO

45

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 1.0 mAdc, IC = 0)

V(BR)EBO

5.0

—

Vdc

Collector Cutoff Current

(VCE = 32 Vdc)

(VCE = 32 Vdc, TA = 150°C)

ICES

—

—

20

20

nAdc

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

—

20

nAdc

1. FR– 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Order this document

by BCX70GLT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BCX70GLT1

BCX70JLT1

BCX70KLT1

1

2

3

CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)

COLLECTOR

3

1

BASE

2

EMITTER