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2SD1049 Arkusz danych(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1049 Arkusz danych(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SD1049 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=10mA ;RBE= ∞ 80 V VCBO Collector-base breakdown voltage IC=0.1mA ;IE=0 120 V VEBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=25A IB=2.5A 1.5 V VBEsat Base-emitter saturation voltage IC=25A IB=2.5A 2.0 V ICBO Collector cut-off current VCB=120V IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=25A ; VCE=5V 20 Rth(j-c) Thermal resistance Junction to case 1.55 ℃ /W Switching times ton Turn-on time 1.0 μ s tstg Storage time 2.5 μ s tf Fall time IC=25A IB1=-IB2=2.5A RL=3Ω;PW=20μs; Duty≤2% 0.4 μ s |
Podobny numer części - 2SD1049 |
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Podobny opis - 2SD1049 |
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