MJ13100 datasheet(2/2 Pages) ISC

Numer części	MJ13100

Szczegółowy opis	Silicon NPN Power Transistors

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Producent	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJ13100/13101

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

MJ13100

400

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

MJ13101

IC=100mA ; IB=0

450

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 15A; IB= 3A

IC= 15A; IB= 3A;TC=100℃

1.0

2.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 20A; IB= 4A

3.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 15A; IB= 3A

IC= 15A; IB= 3A;TC=100℃

1.5

V

MJ13100

VCEV=650V;VBE(off)=1.5V

VCEV=650V;VBE(off)=1.5V;TC=100℃

0.5

2.5

ICEV

Collector

Cutoff Current

MJ13101

VCEV=750V;VBE(off)=1.5V

VCEV=750V;VBE(off)=1.5V;TC=100℃

0.5

2.5

mA

MJ13100

VCE= 650V; RBE= 50Ω,TC= 100℃

3.0

ICER

Collector

Cutoff Current

MJ13101

VCE= 750V; RBE= 50Ω,TC= 100℃

3.0

mA

IEBO

Emitter Cutoff Current

VEB= 6V; IC=0

1.0

mA

hFE

DC Current Gain

IC= 15A ; VCE= 3V

8

40

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1.0kHz

450

pF

Switching times;Resistive Load

td

Delay Time

20

50

ns

tr

Rise Time

130

500

ns

ts

Storage Time

900

3500

ns

tf

Fall Time

IC= 15A , VCC= 250V;

IB1= 2A;tp= 30μs; VBE(off)= 5V

Duty Cycle≤2.0%

100

500

ns

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