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ST9435AS8RG Arkusz danych(PDF) 3 Page - Stanson Technology |
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ST9435AS8RG Arkusz danych(HTML) 3 Page - Stanson Technology |
3 / 7 page ST9435A P Channel Enhancement Mode MOSFET - 5.6A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. ST9435A 2007. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=- 250uA -1.0 -3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=-24V,VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=85℃ -5 uA On-State Drain Current ID(on) VDS=-5V,VGS=-4.5V -10 A Drain-source On- Resistance RDS(on) VGS=-10V,ID=-5.6A VGS=-6.0V,ID=-5.0A VGS=-4.5V,ID=-4.4A 0.057 0.072 0.095 Ω Forward Transconductance gfs VDS=-15V,ID=-5.7V 13 S Diode Forward Voltage VSD IS=-2.3A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 16 24 Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID≡-3.5A 4.5 nC Input Capacitance Ciss 680 Output Capacitance Coss 120 Reverse TransferCapacitance Crss VDS ==-15V,VGS=0V f=1MHz 75 pF 14 25 Turn-On Time td(on) tr 16 26 43 70 Turn-Off Time td(off) tf VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 30 52 nS |
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