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LF2805A Arkusz danych(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Numer części LF2805A
Szczegółowy opis  RF Power MOSFET Transistor 5W, 500-1000MHz, 28V
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Producent  MA-COM [M/A-COM Technology Solutions, Inc.]
Strona internetowa  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

LF2805A Arkusz danych(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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RF Power MOSFET Transistor
5W, 500-1000MHz, 28V
M/A-COM Products
Released; RoHS Compliant
LF2805A
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Package Outline
Features
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
Common source configuration
Lower noise floor
Applications
Broadband linear operation
500 MHz to 1400 MHz
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Rating
Drain-Source Voltage
65
Gate-Source Voltage
20
Drain-Source Current
1.4
Power Dissipation
14.4
Junction Temperature
200
Storage Temperature
-65 to +150
Thermal Resistance
12.1
Symbol
VDS
VGS
IDS
PD
TJ
TSTG
θJC
Units
V
V
A
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Max
Units
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
65
-
V
VGS = 0.0 V , IDS = 2.0 mA
Drain-Source Leakage Current
IDSS
-
1.0
mA
VGS = 28.0 V , VGS = 0.0 V
Gate-Source Leakage Current
IGSS
-
1.0
µA
VGS = 20.0 V , VDS = 0.0 V
Gate Threshold Voltage
VGS(TH)
2.0
6.0
V
VDS = 10.0 V , IDS = 10.0 mA
Forward Transconductance
GM
80
-
mS
VDS = 10.0 V , IDS 100.0 mA , Δ VGS = 1.0V, 80 μs Pulse
Input Capacitance
CISS
-
7
pF
VDS = 28.0 V , F = 1.0 MHz
Output Capacitance
COSS
-
5
pF
VDS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
CRSS
-
2.4
pF
VDS = 28.0 V , F = 1.0 MHz
Power Gain
GP
10
-
dB
VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W, F =1.0 GHz
Drain Efficiency
ŋD
50
-
%
VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W, F =1.0 GHz
Load Mismatch Tolerance
VSWR-T
-
20:1
-
VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W, F =1.0 GHz
LETTER
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
20.70
20.96
.815
.825
B
14.35
14.61
.565
.575
C
13.72
14.22
.540
.560
D
6.27
6.53
.247
.257
E
6.22
6.48
.245
.255
F
6.22
6.48
.245
.255
G
1.14
1.40
.045
.055
H
2.92
3.18
.115
.125
J
1.40
1.65
.055
.065
K
1.96
2.46
.077
.097
L
3.61
4.37
.142
.172
M
.08
.15
.003
.006
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
500
4.3 - j29.0
27.3 +j28.6
1000
2.2 - j2.75
8.0 + j16.0
1400
2.8 - j3.0
9.4 + j10.6
VDD = 28V, IDQ = 50 mA, POUT = 5.0 W
TYPICAL DEVICE IMPEDANCE
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance as
measured from drain to ground.


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