2SK1359 datasheet(2/6 Pages) TOSHIBA

Numer części	2SK1359

Szczegółowy opis	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK1359

2002-09-04

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±25 V, VDS = 0 V

—

±50

nA

Drain cut−off current

IDSS

VDS = 800 V, VGS = 0 V

—

300

µA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

1000

—

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.5

—

3.5

V

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 2 A

—

3.0

3.8

Ω

Forward transfer admittance

|Yfs|

VDS = 20 V, ID = 2 A

1.0

2.0

—

S

Input capacitance

Ciss

—

700

—

Reverse transfer capacitance

Crss

—

55

—

Output capacitance

Coss

VDS = 25 V, VGS = 0V, f = 1 MHz

—

100

—

pF

Rise time

tr

—

18

—

Turn−on time

ton

—

30

—

Fall time

tf

—

12

—

Switching time

Turn−off time

toff

—

70

—

ns

Total gate charge (Gate−source

plus gate−drain)

Qg

—

60

—

Gate−source charge

Qgs

—

35

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 4 A

—

25

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

5

A

Pulse drain reverse current

(Note 1)

IDRP

—

15

A

Forward voltage (diode)

VDSF

IDR = 4 A, VGS = 0 V

—

−1.9

V

Marking

※

Type

K1359

※ Lot Number

Month (starting from alphabet A)

Year (last number of the christian era)

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