MOS INTEGRATED CIRCUIT

MC-4532DA727

32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE

REGISTERED TYPE

DATA SHEET

Document No. E0073N20 (Ver.2.0)

Date Published September 2001 (K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Description

The MC-4532DA727 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

128M SDRAM:

µPD45128441 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 33,554,432 words by 72 bits organization (ECC type)

• Clock frequency and access time from CLK.

Part number

/CAS latency

Clock frequency

Access time from CLK

(MAX.)

(MAX.)

MC-4532DA727EF-A75

CL = 3

133 MHz

5.4 ns

CL = 2

100 MHz

6.0 ns

MC-4532DA727PF-A75

CL = 3

133 MHz

5.4 ns

CL = 2

100 MHz

6.0 ns

MC-4532DA727XF-A75

CL = 3

133 MHz

5.4 ns

CL = 2

100 MHz

6.0 ns

MC-4532DA727XFA-A75

CL = 3

133 MHz

5.4 ns

CL = 2

100 MHz

6.0 ns

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and Full Page)

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

This product became EOL in September, 2002.