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IXZ4DF18N50 Arkusz danych(PDF) 2 Page - IXYS Corporation

Numer części IXZ4DF18N50
Szczegółowy opis  RF Power MOSFET & DRIVER
Download  7 Pages
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Producent  IXYS [IXYS Corporation]
Strona internetowa  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXZ4DF18N50 Arkusz danych(HTML) 2 Page - IXYS Corporation

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IXZ4DF18N50
RF Power MOSFET & DRIVER
Device Specifications
Device Performance
Symbol
Test Condition
Minimum
Typical
Maximum
Rds(ON)
VCC = 15 V, ID = 0.5IDM25
Pulse Test, t ≤ 300 S, Duty Cycle ≤ 2%
0.29
VCC, VCCIN
8V
15V
20V
IN (Signal Input)
- 5V
VCCIN+0.3V
VIH (High Input Voltage)
VCCIN -2V
VCCIN+0.3V
VIL (Low Input Voltage)
0.8V
ZIN
f = 1MHz
7960
Cstray
f = 1MHz Any one pin to the back plane
metal
46pf
COSS
VGS = 0V, VDS = 0.8VDSS(max) ,
f =1MHz
139pf
tONDLY
TC = 25°C
VCC, VCCIN, VIN = 15V, 1 S Pulse,
VDS = 50V, RL = 5.0
17 nS
tOFFDLY
26 nS
tR
TC = 25°C
VCC, VCCIN, VIN = 15V,1 S Pulse,
VDS = 50V, RL = 5.0
3 nS
tF
3 nS
Symbol
Maximum
Ratings
fMAX
ID = 0.5IDM25
40MHz
VDSS
500V
VCC, VCCIN
20V
IDSS
VDS = 0.8VDSS
TJ = 25C
50uA
VGS = 0V
TJ = 125C
1mA
IDM25
TC
= 25°C
19A
IDM
TC = 25°C, Pulse limited by TJM
95A
IAR
TC = 25°C
19A
PT (MOSFET and Driver)
TC
= 25°C
500 W
RthJC
0.25 °C/W
RthJHS
TBD °C/W
Test Conditions
Parameter
Value
Maximum Junction Temperature
150°C
Operating Temperature Range
- 40°C to 85°C
Weight
5.5g


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