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BTB1424A3 Arkusz danych(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1424A3 Arkusz danych(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C817A3-R Issued Date : 2006.05.30 Revised D ate: Page:1/4 BTB1424A3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD2150A3 • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V IC(DC) -3 A Collector Current IC(pulse) -7 (Note) A Power Dissipation Pd 750 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single Pulse Pw≦350 µs, Duty≦2%. BTB1424A3 TO-92 B:Base C:Collector E:Emitter E C B |
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