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TS13003MVCTB0 Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS13003MVCTB0 Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 6 page TS13003MV High Voltage NPN Transistor 2/6 Version: G07 Electrical Specifications (Tc = 25ºC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static IC = 1mA, IE = 0, t=300uS 800 -- -- Collector-Base Voltage IC = 1mA, IE = 0, Tc=125ºC, t=2uS BVCBO 830 -- -- V IC = 1mA, IB = 0, t=300uS 830 -- -- Collector-Emitter Sustaning Voltage IC = 1mA, IB = 0, Tc=125ºC, t=2uS BVCES 830 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector-Emitter Cutoff Current VCE = 400V, IB = 0 ICEO -- -- 1 uA Collector Cutoff Current VCB = 800V, IE = 0 ICBO -- -- 1 uA Emitter Cutoff Current VEB = 9V, IC = 0 IEBO -- 0.1 1 uA Collector-Emitter Saturation Voltage IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A IC / IB = 1.5A / 0.5A VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 -- -- -- 0.2 0.35 0.6 0.5 0.8 1.5 V Base-Emitter Saturation Voltage IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A VBE(SAT)1 VBE(SAT)2 -- -- -- -- 1.1 1.3 V DC Current Gain VCE = 2V, IC = 10mA VCE = 2V, IC = 400mA VCE = 2V, IC = 1A hFE1 hFE2 hFE3 15 20 6 -- -- -- -- 40 20 DC Current Gain VCE = 2V, IC = 400mA, Tc=120ºC hFE4 15 -- 25 Dynamic Frequency VCE = 10V, IC = 0.1A fT 4 -- -- MHz Output Capacitance VCB = 10V, f = 0.1MHz Cob -- 21 -- pF Resistive Load Switching Time (Ratings) Delay Time td -- 0.1 0.2 uS Rise Time tr -- 0.6 1 uS Storage Time tSTG -- 2 4 uS Fall Time VCC = 125V, IC = 1A, IB1 = IB2 = 200mA, tp = 25uS, Tc=25ºC Duty Cycle ≤1% tf -- 0.2 0.6 uS Delay Time td -- 0.10 0.13 uS Rise Time tr -- 0.38 0.51 uS Storage Time tSTG -- 0.34 0.43 uS Fall Time VCC = 125V, IC = 0.4A, IB1 = 15mA, IB2 = 150mA, tp = 25uS, Tc=25 ºC Duty Cycle ≤ 1% tf -- 0.03 0.05 uS Delay Time td -- 0.13 -- uS Rise Time tr -- 0.66 -- uS Storage Time tSTG -- 0.25 -- uS Fall Time VCC = 125V, IC = 0.4A, IB1 = 15mA, IB2 = 150mA, tp = 25uS, Tc=120 ºC Duty Cycle ≤ 1%, tf -- 0.05 -- uS Note: pulse test: pulse width ≤300uS, duty cycle ≤2% |
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