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74ABT821D Arkusz danych(PDF) 5 Page - NXP Semiconductors |
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74ABT821D Arkusz danych(HTML) 5 Page - NXP Semiconductors |
5 / 16 page 74ABT821_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 25 February 2010 5 of 16 NXP Semiconductors 74ABT821 10-bit D-type flip-flop; positive-edge trigger; 3-state 7. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C. 8. Recommended operating conditions Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +7.0 V VI input voltage [1] −1.2 +7.0 V VO output voltage output in OFF-state or HIGH-state [1] −0.5 +5.5 V IIK input clamping current VI < 0 V −18 - mA IOK output clamping current VO < 0 V −50 - mA IO output current output in LOW-state - 128 mA Tj junction temperature [2] - 150 °C Tstg storage temperature −65 +150 °C Table 5. Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage 4.5 - 5.5 V VI input voltage 0 - VCC V VIH HIGH-level input voltage 2.0 - - V VIL LOW-level input voltage - - 0.8 V IOH HIGH-level output current −32 --mA IOL LOW-level output current - - 64 mA ∆t/∆V input transition rise and fall rate 0 - 5 ns/V Tamb ambient temperature in free air −40 - +85 °C |
Podobny numer części - 74ABT821D |
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Podobny opis - 74ABT821D |
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