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74HC00BQ Datasheet(Arkusz danych) 5 Page - NXP Semiconductors

Numer części 74HC00BQ
Szczegółowy opis  Quad 2-input NAND gate
Pobierz  15 Pages
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
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74HC_HCT00_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 11 January 2010
5 of 15
NXP Semiconductors
74HC00; 74HCT00
Quad 2-input NAND gate
10. Dynamic characteristics
74HCT00
VIH
HIGH-level
input voltage
VCC = 4.5 V to 5.5 V
-
1.6
-
2.0
-
2.0
-
V
VIL
LOW-level
input voltage
VCC = 4.5 V to 5.5 V
-
1.2
-
-
0.8
-
0.8
V
VOH
HIGH-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = −20 μA
-
4.5
-
4.4
-
4.4
-
V
IO = −4.0 mA
-
4.32
-
3.84
-
3.7
-
V
VOL
LOW-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = 20 μA; VCC = 4.5 V
-
0
-
-
0.1
-
0.1
V
IO = 5.2 mA; VCC = 6.0 V
-
0.15
-
-
0.33
-
0.4
V
II
input leakage
current
VI = VCC or GND;
VCC = 6.0 V
-
-
-
-
±1
-
±1
μA
ICC
supply current
VI = VCC or GND; IO = 0 A;
VCC = 6.0 V
-
-
-
-
20
-
40
μA
ΔI
CC
additional
supply current
per input pin;
VI = VCC − 2.1 V; IO = 0 A;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
-
150
-
-
675
-
735
μA
CI
input
capacitance
-
3.5
-
-
-
-
-
pF
Table 6.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25
°C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
Table 7.
Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
25
°C
−40 °C to +125 °C Unit
Min
Typ
Max
Max
(85
°C)
Max
(125
°C)
74HC00
tpd
propagation delay
nA, nB to nY; see Figure 6
[1]
VCC = 2.0 V
-
25
-
115
135
ns
VCC = 4.5 V
-
9
-
23
27
ns
VCC = 5.0 V; CL = 15 pF
-
7
-
-
-
ns
VCC = 6.0 V
-
7
-
20
23
ns
tt
transition time
see Figure 6
[2]
VCC = 2.0 V
-
19
-
95
110
ns
VCC = 4.5 V
-
7
-
19
22
ns
VCC = 6.0 V
-
6
-
16
19
ns
CPD
power dissipation
capacitance
per package; VI = GND to VCC
[3]
-
22
-
-
-
pF




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