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Z00607MA,412 Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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Z00607MA,412 Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 12 page Z00607MA_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 26 February 2008 2 of 12 NXP Semiconductors Z00607MA Triac logic level 3. Ordering information 4. Limiting values Table 2. Ordering information Type number Package Name Description Version Z00607MA TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage - 600 V IT(RMS) RMS on-state current full sine wave; Tlead ≤ 55 °C; see Figure 4 and 5 - 0.8 A ITSM non-repetitive peak on-state current full sine wave; Tj =25 °C prior to surge; see Figure 2 and 3 t = 20 ms - 9 A t = 16.7 ms - 10 A I2tI2t for fusing tp = 10 ms - 0.32 A2s dIT/dt rate of rise of on-state current ITM = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs T2+ G+ - 50 A/ µs T2+ G − -50 A/ µs T2 − G− -50 A/ µs T2 − G+ - 10 A/ µs IGM peak gate current - 1 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C |
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