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BTA312B-800ET Arkusz danych(PDF) 6 Page - NXP Semiconductors |
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BTA312B-800ET Arkusz danych(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BTA312B_SER_CT_ET_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 11 April 2007 6 of 12 NXP Semiconductors BTA312B series CT and ET 12 A Three-quadrant triacs high commutation high temperature 6. Static characteristics Table 5. Static characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions BTA312B-600CT BTA312B-800ET Unit Min Typ Max Min Typ Max IGT gate trigger current VD =12V; IT = 0.1 A; see Figure 8 T2+ G+ 2 - 35 - - 10 mA T2+ G − 2 - 35 --10 mA T2 − G− 2 - 35 --10 mA IL latching current VD =12V; IGT = 0.1 A; see Figure 10 T2+ G+ - - 50 - - 25 mA T2+ G − --60 --30 mA T2 − G− --50 --25 mA IH holding current VD =12V; IGT = 0.1 A; see Figure 11 --35 --15 mA VT on-state voltage IT = 15 A; see Figure 9 - 1.3 1.6 - 1.3 1.6 V VGT gate trigger voltage VD =12V; IT = 0.1 A; see Figure 7 - 0.8 1.5 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 150 °C 0.25 - - 0.25 - - V ID off-state current VD =VDRM(max); Tj = 150 °C - 0.4 2 - 0.4 2 mA |
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