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PZT4403 Arkusz danych(PDF) 4 Page - NXP Semiconductors |
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PZT4403 Arkusz danych(HTML) 4 Page - NXP Semiconductors |
4 / 9 page PZT4403_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 2 March 2010 4 of 9 NXP Semiconductors PZT4403 40 V, 600 mA PNP switching transistor 8. Test information VCE = −1V Fig 1. DC current gain as a function of collector current; typical values mgs333 0 300 100 200 −10−1 −1 −10 −102 −103 hFE IC (mA) Vi = −9.5 V; T = 500 μs; tp =10 μs R1 = 68 Ω; R2 = 325 Ω;R B = 325 Ω; RC = 160 Ω VBB = 3.5 V; VCC = −29.5 V Oscilloscope input impedance Zi =50 Ω Fig 2. Test circuit for switching times RC R2 R1 DUT mgd624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC |
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