N01L63W3AT25IT datasheet(3/10 Pages) ONSEMI

Numer części	N01L63W3AT25IT

Szczegółowy opis	1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 횞 16 bit

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Producent	ONSEMI [ON Semiconductor]

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3 / 10 page

Rev.

9 | Page 3 of 10 | www.onsemi.com

N01L63W3A

Absolute Maximum Ratings1

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the operating section of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Item

Symbol

Rating

Unit

Voltage on any pin relative to VSS

VIN,OUT

–0.3 to VCC+0.3

V

Voltage on VCC Supply Relative to VSS

VCC

–0.3 to 4.5

V

Power Dissipation

PD

500

mW

Storage Temperature

TSTG

–40 to 125

oC

Operating Temperature

TA

-40 to +85

oC

Soldering Temperature and Time

TSOLDER

260oC, 10sec

oC

Operating Characteristics (Over Specified Temperature Range)

Item

Symbol

Test Conditions

Min.

Typ1

1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.

Max

Unit

Supply Voltage

VCC

2.3

3.6

V

Data Retention Voltage

VDR

Chip Disabled3

1.8

V

Input High Voltage

VIH

1.8

VCC+0.3

V

Input Low Voltage

VIL

–0.3

0.6

V

Output High Voltage

VOH

IOH = 0.2mA

VCC–0.2

V

Output Low Voltage

VOL

IOL = -0.2mA

0.2

V

Input Leakage Current

ILI

VIN = 0 to VCC

0.5

µA

Output Leakage Current

ILO

OE = VIH or Chip Disabled

0.5

µA

Read/Write Operating Supply Current

@ 1

µs Cycle Time2

2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive

output capacitance expected in the actual system.

ICC1

VCC=3.6 V, VIN=VIH or VIL

Chip Enabled, IOUT = 0

2.0

3.0

mA

Read/Write Operating Supply Current

@ 70 ns Cycle Time2

ICC2

VCC=3.6 V, VIN=VIH or VIL

Chip Enabled, IOUT = 0

9.5

14.0

mA

Page Mode Operating Supply Current

@ 70ns Cycle Time3 (Refer to Power

Savings with Page Mode Operation

diagram)

3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be

within 0.2 volts of either VCC or VSS

ICC3

VCC=3.6 V, VIN=VIH or VIL

Chip Enabled, IOUT = 0

4.0

mA

Read/Write Quiescent Operating Sup-

ply Current3

ICC4

VCC=3.6 V, VIN=VIH or VIL

Chip Enabled, IOUT = 0,

f = 0

3.0

mA

Maximum Standby Current3

ISB1

VIN = VCC or 0V

Chip Disabled

tA= 85oC, VCC = 3.6 V

2.0

20

µA

Maximum Data Retention Current3

IDR

Vcc = 1.8V, VIN = VCC or 0

Chip Disabled, tA= 85oC

10

µA

Podobny numer części - N01L63W3AT25IT

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	N01L63W2A	657Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 횞 16 bit July 2008 - Rev. 9
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	N01L63W2AB25IT	657Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 횞 16 bit July 2008 - Rev. 9
	N01L63W2AB5I	657Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 횞 16 bit July 2008 - Rev. 9
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Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	N01L63W2A	657Kb / 10P	1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 횞 16 bit July 2008 - Rev. 9
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NanoAmp Solutions, Inc.	N01L083WC2A	118Kb / 1P	1Mb Ultra-Low Power Asynchronous CMOS SRAM
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GSI Technology	GS71216TP	184Kb / 12P	64K x 16 1Mb Asynchronous SRAM
NanoAmp Solutions, Inc.	N08L163WC2C	241Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit

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N01L63W3AT25IT Arkusz danych(PDF) 3 Page - ON Semiconductor

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