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Z0107MNT1G Arkusz danych(PDF) 6 Page - ON Semiconductor |
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Z0107MNT1G Arkusz danych(HTML) 6 Page - ON Semiconductor |
6 / 8 page Z0103MN, Z0107MN, Z0109MN http://onsemi.com 6 Figure 8. Power Dissipation 1.0 0.8 0.7 0.5 0.4 0.2 0 IT(RMS), RMS ON‐STATE CURRENT (AMPS) Figure 9. Thermal Response, Device Mounted on Figure 1 Printed Circuit Board 0.5 0.4 0.3 0.2 0.1 0 0.6 0.7 0.8 dc 90 ° 120 ° 10 1.0 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) t, TIME (SECONDS) 0.01 1.0 0.001 0.0001 1.0 0.01 0.1 10 100 10 0.1 10 1.0 TJ, JUNCTION TEMPERATURE (°C) 90 80 70 60 100 110 VDRM = 200 V 400 Hz 300 Hz 0.9 0.6 0.3 0.1 1.0 110 ° VDRM ITM 60 Hz tw 30 ° f = 1 2 tw 60 ° 80 ° 180 Hz α = 180° 60 ° (di dt)c + 6f I TM 1000 100 ° α α α = CONDUCTION ANGLE Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c LL 1N4007 200 V + MEASURE I - CHARGE CONTROL CHARGE TRIGGER NON‐POLAR CL 51 W MT2 MT1 1N914 G 200 VRMS ADJUST FOR ITM, 60 Hz VAC Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. RS ADJUST FOR dv/dt(c) CS Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS |
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Podobny opis - Z0107MNT1G |
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