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Z0109MARL1G Arkusz danych(PDF) 3 Page - ON Semiconductor |
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3 / 10 page Z0103MA, Z0107MA, Z0109MA http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Unit Max Typ Min Symbol DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open, TJ = 110°C, f = 250 Hz, with Snubber) di/dt(c) 1.6 − − A/ms Critical Rate of Rise of Off−State Voltage (VD = 67% Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) Z0103MA Z0107MA Z0109MA dv/dt 10 20 50 30 60 75 − − − V/ms Repetitive Critical Rate of Rise of On−State Current, TJ = 125°C Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz di/dt − − 20 A/ms |
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