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KM416C4000C Arkusz danych(PDF) 8 Page - Samsung semiconductor

Numer części KM416C4000C
Szczegółowy opis  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Download  35 Pages
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Producent  SAMSUNG [Samsung semiconductor]
Strona internetowa  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C4000C Arkusz danych(HTML) 8 Page - Samsung semiconductor

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KM416C4000C, KM416C4100C
CMOS DRAM
KM416C40(1)00C Truth Table
RAS
LCAS
UCAS
W
OE
DQ0 - DQ7
DQ8-DQ15
STATE
H
X
X
X
X
Hi-Z
Hi-Z
Standby
L
H
H
X
X
Hi-Z
Hi-Z
Refresh
L
L
H
H
L
DQ-OUT
Hi-Z
Byte Read
L
H
L
H
L
Hi-Z
DQ-OUT
Byte Read
L
L
L
H
L
DQ-OUT
DQ-OUT
Word Read
L
L
H
L
H
DQ-IN
-
Byte Write
L
H
L
L
H
-
DQ-IN
Byte Write
L
L
L
L
H
DQ-IN
DQ-IN
Word Write
L
L
L
H
H
Hi-Z
Hi-Z
-
NOTES
An initial pause of 200
us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
Measured with a load equivalent to 2 TTL load and 100pF.
Operation within the
tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a reference point only.
If
tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
Assumes that
tRCD
tRCD(max).
tOFF(min)and tOEZ(max) define the time at which the output achieves the open circuit condition and are not referenced Voh
or Vol.
tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical char-
acteristics only. If
tWCS
tWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If
tCWD
tCWD(min), tRWDtRWD(min) and tAWDtAWD(min), then the cycle is a read-modify-write cycle
and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the
condition of the data out is indeterminate.
Either
tRCH or tRRH must be satisfied for a read cycle.
These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in read-modify-write cycles.
Operation within the
tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only.
If
tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
These specifications are applied in the test mode.
In test mode read cycle, the value of
tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters
should be specified in test mode cycles by adding the above value to the specified value in this data sheet.
5.
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