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FC112 Arkusz danych(PDF) 1 Page - Sanyo Semicon Device

Numer części FC112
Szczegółowy opis  NPN Epitaxial Planar Silicon Composite Transistor Switching Applications
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Producent  SANYO [Sanyo Semicon Device]
Strona internetowa  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FC112 Arkusz danych(HTML) 1 Page - Sanyo Semicon Device

  FC112 Datasheet HTML 1Page - Sanyo Semicon Device FC112 Datasheet HTML 2Page - Sanyo Semicon Device  
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52098HA (KT)/4139MO, TS No.3080-1/2
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
Ordering number:EN3080
FC112
Package Dimensions
unit:mm
2066
[FC112]
C1:Collerctor1
C2:Collerctor2
B2:Base2
EC:Emitter Common
B1:Base1
SANYO:CP5
Features
· On-chip bias resistors (R1=22kΩ, R2=22kΩ)
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC112 is formed with two chips, being equiva-
lent to the 2SC3396, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Note: The specifications shown above are for each individual transistor.
Marking:112
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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