FDD3860 datasheet(3/6 Pages) FAIRCHILD

Numer części	FDD3860

Szczegółowy opis	N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low

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Producent	FAIRCHILD [Fairchild Semiconductor]

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FDD3860 Rev.C1

Typical Characteristics T

J = 25°C unless otherwise noted

Figure 1.

01

2

3

45

0

10

20

30

40

50

60

VGS = 8V

VGS = 6V

VGS = 10V

VGS = 7V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics

Figure 2.

0

1020

30

4050

60

0.5

1.0

1.5

2.0

2.5

3.0

V

GS = 7V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

ID, DRAIN CURRENT (A)

V

GS = 8V

V

GS = 6V

V

GS = 10V

Normalized On-Resistance

vs Drain Current and Gate Voltage

Figure 3. Normalized On- Resistance

-75

-50

-25

0

25

50

75

100

125

150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 5.9A

VGS = 10V

TJ, JUNCTION TEMPERATURE (

oC

)

vs Junction Temperature

Figure 4.

56

7

8

9

10

0

20

40

60

80

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

TJ = 125oC

TJ = 25oC

ID = 5.9A

VGS, GATE TO SOURCE VOLTAGE (V)

On-Resistance vs Gate to

Source Voltage

Figure 5. Transfer Characteristics

2468

10

0

10

20

30

40

50

60

VDS = 10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

TJ = -55oC

TJ = 25oC

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1E-3

0.01

0.1

1

10

100

TJ = -55oC

TJ = 25oC

TJ = 150oC

VGS = 0V

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

Podobny numer części - FDD3860

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Fairchild Semiconductor	FDD3860	335Kb / 6P	N-Channel PowerTrench MOSFET
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FDD3860 Arkusz danych(PDF) 3 Page - Fairchild Semiconductor

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