FDD3860 datasheet(4/6 Pages) FAIRCHILD

Numer części	FDD3860

Szczegółowy opis	N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low

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Producent	FAIRCHILD [Fairchild Semiconductor]

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FDD3860 Rev.C1

Figure 7.

0

5

10

15

20

25

0

2

4

6

8

10

ID = 5.9A

VDD = 75V

VDD = 25V

Qg, GATE CHARGE (nC)

VDD = 50V

Gate Charge Characteristics

Figure 8.

0.1

1

10

100

10

100

1000

3000

f = 1MHz

VGS = 0V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

10

100

2

4

6

8

10

1

TJ = 25oC

TJ = 125oC

t

AV, TIME IN AVALANCHE (ms)

Unclamped Inductive

Switching Capability

Figure 10.

25

50

75

100

125

150

0

7

14

21

28

35

RθJC = 1.8

o

C/W

VGS = 10V

T

C

, CASE TEMPERATURE (

o

C

)

Maximum Continuous Drain

Current vs Case Temperature

Figure 11. Forward Bias Safe

Operating Area

0.1

1

10

100

0.1

1

10

100

DC

10ms

1ms

100us

THIS AREA IS

LIMITED BY rds(on)

300

SINGLE PULSE

TJ = MAX RATED

RθJC = 1.8

oC/W

TC = 25oC

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 12.

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

1

10

2

10

3

10

4

10

5

V

GS = 10V

SINGLE PULSE

RθJC = 1.8

o

C/W

t, PULSE WIDTH (sec)

Single Pulse Maximum Power Dissipation

Typical Characteristics T

J = 25°C unless otherwise noted

Podobny numer części - FDD3860

Producent	Numer części	Arkusz danych	Szczegółowy opis
Fairchild Semiconductor	FDD3860	335Kb / 6P	N-Channel PowerTrench MOSFET
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Fairchild Semiconductor	FDD3860	335Kb / 6P	N-Channel PowerTrench MOSFET

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Podobny opis - FDD3860

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List of Unclassifed Man...	MT2301	522Kb / 7P	High performance trench technology for extremely low RDS(ON)
Fairchild Semiconductor	FDD2572	247Kb / 11P	N-Channel PowerTrench MOSFET 150V, 29A, 54m?
	FDB2572	269Kb / 11P	N-Channel PowerTrench MOSFET 150V, 29A, 54m?
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FDD3860 Arkusz danych(PDF) 4 Page - Fairchild Semiconductor

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