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Z0103MA0 Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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Z0103MA0 Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 13 page Z0103MA0 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 01 — 3 January 2011 2 of 13 NXP Semiconductors Z0103MA0 4Q Triac 2. Pinning information 3. Ordering information 4. Limiting values Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T2 main terminal 2 SOT54 (TO-92) 2 G gate 3 T1 main terminal 1 1 2 3 sym051 T1 G T2 Table 3. Ordering information Type number Package Name Description Version Z0103MA0 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage - 600 V IT(RMS) RMS on-state current full sine wave; Tlead ≤ 38 °C; see Figure 3; see Figure 1; see Figure 2 -1 A ITSM non-repetitive peak on-state current full sine wave; Tj(init) =25°C; tp = 20 ms; see Figure 4; see Figure 5 - 12.5 A full sine wave; Tj(init) =25°C; tp = 16.7 ms - 13.8 A I2t I2t for fusing tp = 10 ms; sine-wave pulse - 0.78 A2s dIT/dt rate of rise of on-state current IT =1A; IG =20mA; dIG/dt = 100 mA/µs; T2+ G+ -50 A/µs IT =1A; IG =20mA; dIG/dt = 100 mA/µs; T2+ G- -50 A/µs IT =1A; IG =20mA; dIG/dt = 100 mA/µs; T2- G- -50 A/µs IT =1A; IG =20mA; dIG/dt = 100 mA/µs; T2- G+ -20 A/µs IGM peak gate current - 1 A PGM peak gate power - 2 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C |
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