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Z0103MA0 Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części Z0103MA0
Szczegółowy opis  4Q Triac Direct interfacing to logic level ICs
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

Z0103MA0 Arkusz danych(HTML) 2 Page - NXP Semiconductors

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Z0103MA0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2011
2 of 13
NXP Semiconductors
Z0103MA0
4Q Triac
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
T2
main terminal 2
SOT54 (TO-92)
2
G
gate
3
T1
main terminal 1
1
2
3
sym051
T1
G
T2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
Z0103MA0
TO-92
plastic single-ended leaded (through hole) package; 3 leads
SOT54
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
-
600
V
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 38 °C; see Figure 3;
see Figure 1; see Figure 2
-1
A
ITSM
non-repetitive peak on-state
current
full sine wave; Tj(init) =25°C; tp = 20 ms;
see Figure 4; see Figure 5
-
12.5
A
full sine wave; Tj(init) =25°C; tp = 16.7 ms
-
13.8
A
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
-
0.78
A2s
dIT/dt
rate of rise of on-state current
IT =1A; IG =20mA; dIG/dt = 100 mA/µs;
T2+ G+
-50
A/µs
IT =1A; IG =20mA; dIG/dt = 100 mA/µs;
T2+ G-
-50
A/µs
IT =1A; IG =20mA; dIG/dt = 100 mA/µs;
T2- G-
-50
A/µs
IT =1A; IG =20mA; dIG/dt = 100 mA/µs;
T2- G+
-20
A/µs
IGM
peak gate current
-
1
A
PGM
peak gate power
-
2
W
PG(AV)
average gate power
over any 20 ms period
-
0.1
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C


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