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Z0103MA0,116 Arkusz danych(PDF) 6 Page - NXP Semiconductors

Numer części Z0103MA0,116
Szczegółowy opis  4Q Triac Direct interfacing to logic level ICs
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

Z0103MA0,116 Arkusz danych(HTML) 6 Page - NXP Semiconductors

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Z0103MA0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2011
6 of 13
NXP Semiconductors
Z0103MA0
4Q Triac
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
VD =12V; IT = 0.1 A; T2+ G+; Tj =25°C;
see Figure 7
0.2
-
3
mA
VD =12V; IT = 0.1 A; T2+ G-; Tj =25°C;
see Figure 7
0.2
-
3
mA
VD =12V; IT = 0.1 A; T2- G-; Tj =25°C;
see Figure 7
0.2
-
3
mA
VD =12V; IT = 0.1 A; T2- G+; Tj =25°C;
see Figure 7
0.2
-
5
mA
IL
latching current
VD =12V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 8
--7
mA
VD =12V; IG = 0.1 A; T2+ G-; Tj =25°C;
see Figure 8
--20
mA
VD =12V; IG = 0.1 A; T2- G-; Tj =25°C;
see Figure 8
--7
mA
VD =12V; IG = 0.1 A; T2- G+; Tj =25°C;
see Figure 8
--7
mA
IH
holding current
VD =12V; Tj =25°C; see Figure 12
--7
mA
VT
on-state voltage
IT =1A; Tj =25°C; see Figure 9
-1.3
1.6
V
VGT
gate trigger voltage
VD =12V; IT = 0.1 A; Tj =25°C;
see Figure 10
--1.3
V
VD = 600 V; IT =0.1 A; Tj = 125 °C
0.2
-
-
V
ID
off-state current
VD = 600 V; Tj = 125 °C
--0.5
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM =402 V; Tj = 110 °C; gate open
circuit; exponential waveform;
see Figure 11
80
--V/µs
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj =110 °C;
dIcom/dt = 0.44 A/ms; gate open circuit
0.5
--V/µs


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