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Z0107MN0 Arkusz danych(PDF) 8 Page - NXP Semiconductors

Numer części Z0107MN0
Szczegółowy opis  4Q Triac General purpose low power motor control
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

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Z0107MN0
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2011
8 of 16
NXP Semiconductors
Z0107MN0
4Q Triac
7.
Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
VD =12V; IT = 0.1 A; T2+ G+;
Tj =25°C; see Figure 9
0.3
-
5
mA
VD =12V; IT = 0.1 A; T2+ G-;
Tj =25°C; see Figure 9
0.3
-
5
mA
VD =12V; IT = 0.1 A; T2- G-;
Tj =25°C; see Figure 9
0.3
-
5
mA
VD =12V; IT = 0.1 A; T2- G+;
Tj =25°C; see Figure 9
0.3
-
7
mA
IL
latching current
VD =12V; IG = 0.1 A; T2+ G+;
Tj =25°C; see Figure 10
--10
mA
VD =12V; IG = 0.1 A; T2+ G-;
Tj =25°C; see Figure 10
--25
mA
VD =12V; IG = 0.1 A; T2- G-;
Tj =25°C; see Figure 10
--10
mA
VD =12V; IG = 0.1 A; T2- G+;
Tj =25°C; see Figure 10
--10
mA
IH
holding current
VD =12V; Tj =25 °C;
see Figure 14
--10
mA
VT
on-state voltage
IT =1A; Tj =25°C;
see Figure 11
-1.3
1.6
V
VGT
gate trigger voltage
VD =12V; IT =0.1 A;
Tj =25°C; see Figure 12
--1.3
V
VD =600 V; IT =0.1 A;
Tj = 125 °C
0.2
--V
ID
off-state current
VD =600 V; Tj = 125 °C
-
-
0.5
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
VDM =402 V; Tj = 110 °C; gate
open circuit; exponential
waveform; see Figure 13
100
-
-
V/µs
dVcom/dt
rate of change of commutating
voltage
VD =400 V; Tj =110 °C;
dIcom/dt = 0.44 A/ms; gate
open circuit
0.5
--V/µs


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