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Z0103MN0135 Arkusz danych(PDF) 3 Page - NXP Semiconductors

Numer części Z0103MN0135
Szczegółowy opis  4Q Triac Direct interfacing to logic level ICs
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Z0103MN0
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 3 January 2011
3 of 15
NXP Semiconductors
Z0103MN0
4Q Triac
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
-
600
V
IT(RMS)
RMS on-state current
full sine wave; Tsp ≤ 103 °C;
see Figure 3; see Figure 1; see Figure 2
-1
A
ITSM
non-repetitive peak on-state
current
full sine wave; Tj(init) =25°C;
tp = 20 ms; see Figure 4; see Figure 5
-
12.5
A
full sine wave; Tj(init) =25°C;
tp =16.7ms
-
13.8
A
I2t
I2t for fusing
tp = 10 ms; SIN
-
0.78
A2s
dIT/dt
rate of rise of on-state current
IT =1A; IG =20mA;
dIG/dt = 100 mA/µs; T2+ G+
-50
A/µs
IT =1A; IG =20mA;
dIG/dt = 100 mA/µs; T2+ G-
-50
A/µs
IT =1A; IG =20mA;
dIG/dt = 100 mA/µs; T2- G-
-50
A/µs
IT =1A; IG =20mA;
dIG/dt = 100 mA/µs; T2- G+
-20
A/µs
IGM
peak gate current
-
1
A
PGM
peak gate power
-
2
W
PG(AV)
average gate power
over any 20 ms period
-
0.1
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
Fig 1. RMS on-state current as a function of surge
duration; maximum values
Fig 2. RMS on-state current as a function of solder
point temperature; maximum values
003aac269
0
2
4
6
8
10
-2
10
-1
1
10
surge duration (s)
IT(RMS)
(A)
003aac270
0
0.4
0.8
1.2
-50
0
50
100
150
Tsp (
°C)
IT(RMS)
(A)


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