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BAT750TA Arkusz danych(PDF) 2 Page - Zetex Semiconductors |
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BAT750TA Arkusz danych(HTML) 2 Page - Zetex Semiconductors |
2 / 6 page BAT750 Issue 2 - May 2008 2 www.zetex.com © Zetex Semiconductors plc 2008 Absolute maximum ratings Electrical characteristics (@ Tamb = 25°C unless otherwise stated) Parameter Symbol Limit Unit Collector reverse voltage VR 40 V RMS reverse voltage VR(RMS) 28 V Forward current (continuous) IF 750 mA Forward voltage @ IF = 750mA VF 490 mV Average peak forward current; DC = 50% IFAV 1500 mA Non repetitive forward current t 100 S t 8.3ms IFSM 12 5.5 A Power dissipation @ Tamb = 25°C Ptot 350 mW Typical thermal resistance, junction to ambient air R JA 286 °C/W Storage temperature range Tstg -55 to +150 °C Junction temperature Tj 125 °C Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage V(BR)R 40 60 V IR = 300 A Forward voltage VF 225 280 mV IF = 50mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width = 300 duty cycle 2%. 235 310 mV IF = 100mA(*) 290 350 mV IF = 250mA(*) 340 420 mV IF = 500mA(*) 390 490 mV IF = 750mA(*) 440 540 mV IF = 1000mA(*) 530 650 mV IF = 1500mA(*) Reverse current IR 50 100 AVR = 30V Diode capacitance CD 25 - pF VR = 25V, f = 1.0MHz Reverse recovery time trr 5- ns IF = IR = 100mA, Irr = 10mA |
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