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LC35W1000BTS-10U Arkusz danych(PDF) 5 Page - Sanyo Semicon Device

Numer części LC35W1000BTS-10U
Szczegółowy opis  Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
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Producent  SANYO [Sanyo Semicon Device]
Strona internetowa  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC35W1000BTS-10U Arkusz danych(HTML) 5 Page - Sanyo Semicon Device

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AC Electrical Characteristics at Ta = –40 to +85°C, VCC = 2.7 to 3.6 V
AC test conditions
Input pulse voltage levels: VIL = 0.2 VCC, VIH = 0.8 VCC
Input rise and fall times: 5 ns
Input and output timing leves: 1/2 VCC
Output load: 30 pF (including the jig capacitance)
No. 6624-5/9
LC35W1000BM, BTS-70U/10U
Read cycle
Parameter
Symbol
–70U
–10U
min
max
min
max
Unit
Read cyle time
tRC
70
100
ns
Address access time
tAA
70
100
ns
CE1 access time
tCA1
70
100
ns
CE2 access time
tCA2
70
100
ns
OE access time
tOA
50
50
ns
Output hold time
tOH
10
10
ns
CE1 output enable time
tCOE1
10
10
ns
CE2 output enable time
tCOE2
10
10
ns
OE output enable time
tOCE
5
5
ns
CE1 output disable time
tCOD1
40
35
ns
CE2 output disable time
tCOD2
40
35
ns
OE output disable time
tOOD
35
30
ns
Write cycle
Parameter
Symbol
–70U
–10U
min
max
min
max
Unit
Write cyle time
tWC
70
100
ns
Address setup time
tAS
0
0
ns
Write pulse width
tWP
50
70
ns
CE1 setup time
tCW1
60
90
ns
CE2 setup time
tCW2
60
90
ns
Write recovery time
tWR
0
0
ns
CE1 write recovery time
tWR1
0
0
ns
CE2 write recovery time
tWR2
0
0
ns
Data setup time
tDS
40
50
ns
Data hold time
tDH
0
0
ns
CE1 data hold time
tDH1
0
0
ns
CE2 data hold time
tDH2
0
0
ns
WE output enable time
tWOE
5
5
ns
WE output disable time
tWOD
35
30
ns


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