SIZ700DT datasheet(3/12 Pages) VISHAY

Numer części	SIZ700DT

Szczegółowy opis	N-Channel 20-V (D-S) MOSFETs Compliant to RoHS Directive 2002/95/EC

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Producent	VISHAY [Vishay Siliconix]

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Document Number: 69090

S09-0534-Rev. A, 06-Apr-09

www.vishay.com

3

Vishay Siliconix

SiZ700DT

New Product

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Dynamica

Turn-On Delay Time

td(on)

Channel-1

VDD = 10 V, RL = 10 Ω

ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω

Channel-2

VDD = 10 V, RL = 10 Ω

ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω

Ch-1

9

15

ns

Ch-2

13

20

Rise Time

tr

Ch-1

8

15

Ch-2

8

15

Turn-Off Delay Time

td(off)

Ch-1

25

40

Ch-2

52

80

Fall Time

tf

Ch-1

8

15

Ch-2

15

25

Turn-On Delay Time

td(on)

Channel-1

VDD = 10 V, RL = 10 Ω

ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω

Channel-2

VDD = 10 V, RL = 10 Ω

ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω

Ch-1

8

15

Ch-2

12

20

Rise Time

tr

Ch-1

9

15

Ch-2

8

15

Turn-Off Delay Time

td(off)

Ch-1

25

40

Ch-2

47

75

Fall Time

tf

Ch-1

8

15

Ch-2

10

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

Ch-1

14.7

A

Ch-2

16

Pulse Diode Forward Currenta

ISM

Ch-1

60

Ch-2

60

Body Diode Voltage

VSD

IS = 2.0 A, VGS = 0 V

Ch-1

0.8

1.2

V

IS = 2.3 A, VGS = 0 V

Ch-2

0.8

1.2

Body Diode Reverse Recovery Time

trr

Channel-1

IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C

Channel-2

IF = 2.3 A, dI/dt = 100 A/µs, TJ = 25 °C

Ch-1

25

50

ns

Ch-2

40

80

Body Diode Reverse Recovery Charge

Qrr

Ch-1

13

25

nC

Ch-2

31

60

Reverse Recovery Fall Time

ta

Ch-1

12

ns

Ch-2

21

Reverse Recovery Rise Time

tb

Ch-1

13

Ch-2

19

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