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2SD1220 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SD1220
Szczegółowy opis  Power Amplifier Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1220 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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2SD1220
2010-02-05
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 150 V, IE = 0
1.0
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
150
V
DC current gain
hFE
(Note)
VCE = 5 V, IC = 200 mA
60
320
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
1.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 5 mA
0.5
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 200 mA
20
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
13
20
pF
Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320
Marking
D1220
Lot No.
Note 1
Characteristics
indicator
Part No. (or abbreviation code)
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.


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