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2SD1221 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SD1221
Szczegółowy opis  Audio Frequency Power Amplifier Application
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1221 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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2SD1221
2010-05-19
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
100
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
60
V
hFE (1)
(Note)
VCE = 5 V, IC = 0.5 A
60
300
DC current gain
hFE (2)
VCE = 5 V, IC = 3 A
20
Collector-emitter saturation voltage
VCE (sat)
IC = 3 A, IB = 0.3 A
0.4
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
0.7
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A
3.0
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
70
pF
Turn-on time
ton
0.8
Storage time
tstg
1.5
Switching time
Fall time
tf
IB1 = −IB2 = 0.2 A, DUTY CYCLE ≤ 1%
0.8
μs
Note: hFE classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300
Marking
20 μs
INPUT
IB1
IB2
OUTPUT
VCC = 30 V
IB2
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
D1221
Lot No.
Note 1
Characteristics
indicator
Part No. (or abbreviation code)


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