2N2218_1 datasheet(1/4 Pages) MICROSEMI

Numer części	2N2218

Szczegółowy opis	NPN-SWITCHING SILICON TRANSISTOR

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Producent	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

NPN-SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/251

T4-LDS-0091 Rev. 2 (101484)

Page 1 of 4

DEVICES

LEVELS

2N2218

2N2219

JAN

2N2218A

2N2219A

JANTX

2N2218AL

2N2219AL

JANTXV

JANS *

* Also available in Radiation Hardened versions. See datasheet for JANSR2N2218 &

JANSR2N2219

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

2N2218

2N2219

2N221A; L

2N2219A; L

Unit

Collector-Emitter Voltage

VCEO

30

50

Vdc

Collector-Base Voltage

VCBO

60

75

Vdc

Emitter-Base Voltage

VEBO

5.0

6.0

Vdc

Collector Current

IC

800

mA

Total Power Dissipation

@ TA = +25°C

@ TC = +25°C

PT

0.8

3.0

W

Operating & Storage Junction Temp. Range

Top, Tstg

-55 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Value

Unit

Thermal Resistance, Junction-to-Case

RθJC

59

°C/W

Note: (1) Derate linearly 4.6mW/°C above TA > +25°C

(2) Derate linearly 17.0mW/°C above TC > +25°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

Vdc

IE = 10mAdc

2N2218; 2N2219

2N2218A; 2N2219A / AL

30

50

Emitter-Base Cutoff Current

VEB = 5.0Vdc

VEB = 6.0Vdc

VEB = 4.0Vdc

2N2218; 2N2219

2N2218A; 2N2219A / AL

All Types

IEBO

10

μAdc

ηAdc

Collector-Base Cutoff Current

VCE = 30Vdc

VCE = 50Vdc

2N2218; 2N2219

2N2218A; 2N2219A / AL

ICES

10

ηAdc

TO-39 (TO-205AD)

2N2218, 2N2218A

2N2219, 2N2219A

TO-5

2N2218AL

2N2219AL

Podobny numer części - 2N2218_1

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STMicroelectronics	2N2218-2N2219	71Kb / 5P	HIGH-SPEED SWITCHES January 1989
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Podobny opis - 2N2218_1

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STMicroelectronics	BU406	56Kb / 4P	SILICON NPN SWITCHING TRANSISTOR
New Jersey Semi-Conduct...	BUV42	114Kb / 4P	SILICON NPN SWITCHING TRANSISTOR
ON Semiconductor	MMBT4401WT1	119Kb / 6P	Switching Transistor NPN Silicon February, 2004 ??Rev. 1
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Podobny numer części - 2N2218_1

Podobny opis - 2N2218_1

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