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SB10-18 Arkusz danych(PDF) 1 Page - Sanyo Semicon Device |
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SB10-18 Arkusz danych(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page 43098HA (KT)/1228AT, TS No.2585-1/3 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Schottky Barrier Diode (Twin Type · Cathode Common) 80V, 1A Rectifier Ordering number:EN2585B SB10-18 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e R k a e P e v i t i t e p e RV M R R 0 8 1V e g a t l o V e g r u S e s r e v e R k a e P e v i t i t e p e r n o NV M S R 0 9 1V t n e r r u C t u p t u O e g a r e v AIO 1A t n e r r u C d r a w r o F e g r u SI M S F e l c y c 1 , e v a w e n i s z H 0 5 0 3A e r u t a r e p m e T n o i t c n u Jj T 5 2 1 + o t 5 5 – e r u t a r e p m e T e g a r o t Sg t s T 5 2 1 + o t 5 5 – Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics ˚C ˚C Package Dimensions unit:mm 1159B [SB10-18] Note*: Value per element Electrical Connection JEDEC:TO-220AB EIAJ:SC-46 1:Anode 2:Cathode 3:Anode Applications · High frequency rectification (switching regulators, converters, choppers). Features · Low forward voltage (VF max=0.85V). · Fast reverse recovery time (trr max=35ns). · Low switching noise. · Low leakage current and highly reliability due to highly reliable planar structure. r e t e m a r a Pl o b m y Ss n o t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V e s r e v e RVR 0 8 1V e g a t l o V d r a w r o FVF 5 8 . 0V t n e r r u C e s r e v e RIR 1 . 0A m e m i T y r e v o c e R e s r e v e Rr r t 5 3s n e c n a t s i s e R l a m r e h T c - j h t RC D d e h t o o m S : e s a C - n o i t c n u J 0 . 5 ˚C/W 1:Anode 2:Cathode 3:Anode 50Hz, resistive load, Tc=114˚C IR=0.5mA, Tj=25˚C, * IF=0.4A, Tj=25˚C, * VR=90V, Tj=25˚C, * IF=2A, Tj=25˚C, *,–dIF/dt=10A/µs |
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