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QXX06LTHTP Arkusz danych(PDF) 2 Page - Littelfuse

Numer części QXX06LTHTP
Szczegółowy opis  The Quadrac is an internally triggered Triac designed for AC switching
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Producent  LITTELFUSE [Littelfuse]
Strona internetowa  http://www.littelfuse.com
Logo LITTELFUSE - Littelfuse

QXX06LTHTP Arkusz danych(HTML) 2 Page - Littelfuse

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156
Revised: November 1, 2010 05:04 PM
©2010 Littelfuse, Inc
Teccor® brand Thyristors
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
4 / 6 / 8 / 10 / 15 Amp Quadracs
QxxxxLTx Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS forward current
Qxx04LT: T
C = 95°C
Qxx06LT/Qxx08LT/Qxx10LT: T
C = 90°C
Qxx15LT: T
C = 80°C
4
6
8
10
15
A
I
TSM
Peak non-repetitive surge current
single half cycle; f = 50Hz;
T
J (initial) = 25°C
46
65
83
100
167
A
single half cycle; f = 60Hz;
T
J (initial) = 25°C
55
80
100
120
200
I2t
I2t value for fusing
t
p = 8.3ms
12.5
26.5
41
60
166
A2s
di/dt
Critical rate-of-rise of on-state current
f = 60Hz; T
J =125°C
50
70
100
A/µs
I
GM
Peak gate current
T
J = 125°C
1.5
A
T
stg
Storage temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 125
°C
Note: xx = voltage
Electrical Characteristics (T
J = 25°C, unless otherwise specified) – Standard Quadrac
Electrical Characteristics (T
J = 25°C, unless otherwise specified) – Alternistor Quadrac
Symbol
Test Conditions
Value
Unit
I
H
I
T = 200mA (initial)
MAX.
40
50
60
60
70
mA
dv/dt
V
D = VDRM; gate open; TJ=100°C
MIN.
400V
75
150
175
200
300
V/μs
600V
50
125
150
175
200
V
D = VDRM; gate open; TJ=125°C
MIN.
400V
50
100
120
150
200
600V
50
85
100
120
150
dv/dt(c)
di/dt(c) = 0.54 x I
T(rms) / ms; TJ = 125°C
MIN.
3
4
V/μs
t
gt
(note 1)
TYP.
3
μs
(1) Reference test circuit in figure 10 and waveform in figure 11; C
T = 0.1μF with 0.1μs rise time.
Note: xx = voltage
Symbol
Test Conditions
Value
Unit
I
H
I
T = 20mA (initial)
MAX.
50
50
60
70
mA
dv/dt
V
D = VDRM; gate open; TJ=100°C
MIN.
400V
575
925
V/μs
600V
425
775
V
D = VDRM; gate open; TJ=125°C
MIN.
400V
450
700
600V
350
600
dv/dt(c)
di/dt(c) = 0.54 x I
T(rms) / ms; TJ = 125°C
MIN.
25
30
V/μs
t
gt
(note 1)
TYP.
3
μs
(1) Reference test circuit in figure 10 and waveform in figure 11; C
T = 0.1μF with 0.1μs rise time.
Note: xx = voltage


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