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FSB50450UD Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FSB50450UD
Szczegółowy opis  Smart Power Module (SPM짰)
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FSB50450UD Rev. A
Motion-SPM
April 2010
TM
FSB50450UD
Smart Power Module (SPM®)
Features
• 500V RDS(on)=2.4W(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Embedded bootstrap diode in the package
General Description
FSB50450UD is a tiny smart power module (SPM®) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and
3
half-bridge
HVICs
for
FRFET
gate
driving.
FSB50250UTD provides low electromagnetic interference (EMI)
characteristics with optimized switching speed. Moreover, since
it employs FRFET as a power switch, it has much better
ruggedness and larger safe operation area (SOA) than that of
an IGBT-based power module or one-chip solution. The
package is optimized for the thermal performance and
compactness for the use in the built-in motor application and
any other application where the assembly space is concerned.
FSB50450UD is the most solution for the compact inverter
providing the energy efficiency, compactness, and low
electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Rating
Units
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
500
V
ID25
Each FRFET Drain Current, Continuous
TC = 25°C
1.5
A
ID80
Each FRFET Drain Current, Continuous
TC = 80°C
1.1
A
IDP
Each FRFET Drain Current, Peak
TC = 25°C, PW < 100ms
3.8
A
PD
Maximum Power Dissipation
TC = 25°C, Each FRFET
14
W
VCC
Control Supply Voltage
Applied between VCC and COM
20
V
VBS
High-side Bias Voltage
Applied between VB(U)-U, VB(V)-V, VB(W)-W
20
V
VIN
Input Signal Voltage
Applied between IN and COM
-0.3 ~ VCC+0.3
V
TJ
Operating Junction Temperature
-40 ~ 150
°C
TSTG
Storage Temperature
-40 ~ 125
°C
RqJC
Junction to Case Thermal Resistance
Each FRFET under inverter operating con-
dition (Note 1)
8.9
°C/W
VISO
Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
Vrms


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