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TLPGE19TP Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TLPGE19TP Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TL(PGE,FGE,GE,PYE)19TP(F) 2009-12-04 3 Electrical and Optical Characteristics (Ta = 25°C) Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR λd λP Δλ Product Name Min Typ. Max Typ. Typ. IF Min Typ. IF Min Typ. IF Max IF TLPGE19TP(F) - 558 564 562 14 20 153 500 20 2.1 2.4 20 50 4 TLFGE19TP(F) 559 565 570 568 15 20 272 800 20 2.0 2.4 20 50 4 TLGE19TP(F) 565 571 576 574 17 20 476 1300 20 2.0 2.4 20 50 4 TLPYE19TP(F) 574 580 586 583 14 20 476 2000 20 2.0 2.4 20 50 4 Unit nm mA mcd V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
Podobny numer części - TLPGE19TP |
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Podobny opis - TLPGE19TP |
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