KTD1304 datasheet(1/2 Pages) SECOS

Numer części	KTD1304

Szczegółowy opis	NPN Plastic Encapsulated Transistor

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Producent	SECOS [SeCoS Halbleitertechnologie GmbH]

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Elektronische Bauelemente

KTD1304

0.3 A, 25 V

NPN Plastic Encapsulated Transistor

01-June-2005 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

High emitter-base voltage: VEBO=12V(Min)

low on resistance: Ron=0.6Ω(max)(IB=1mA)

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

25

V

Collector to Emitter Voltage

VCEO

20

V

Emitter to Base Voltage

VEBO

12

V

Collector Current - Continuous

IC

300

mA

Collector Power Dissipation

Pc

200

mW

Junction, Storage Temperature

TJ, TSTG

+150, -55 ~ +150

℃

CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

25

-

V

IC = 100 uA

BVCEO

20

-

V

IC = 1 mA

BVEBO

12

-

V

IE = 100 uA

ICBO

-

0.1

uA

VCB = 25 V

IEBO

-

0.1

uA

VEB = 12 V

hFE1 (FORWARD)

200

-

1000

VCE = 2 V, IC=4 mA

hFE1 (REVERSE)

20

-

VCE = 2 V, IC=4 mA

VCE(sat)

-

0.25

V

IC =100 mA, IB=10 mA

VBE(sat)

-

1

V

IC =100 mA, IB=10 mA

fT

-

60

-

MHz

VCE = 10 V, IC = 1 mA, f = 100 MHz

COB

-

10

-

pF

VCB = 10 V, IE = 0, f = 1 MHz

R(ON)

-

0.6

-

Ω

VIN=0.3 V, IB=1mA, f=1KHz

Collector

Base

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

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